ALN سیرامک ​​سبسٹریٹس

Using an AlN ceramic substrate as the carrier of the chip can isolate the chip from the module's heat dissipation base. The AlN ceramic layer in the middle of the substrate can effectively improve the insulation capacity of the module (the insulation withstand voltage of the ceramic layer is > 2.5 kV). At the same time, the aluminum nitride ceramic substrate has good thermal conductivity, and the thermal conductivity can reach 170-250W/mK. In addition, the expansion coefficient of the AlN ceramic substrate is similar to that of silicon and will not cause stress damage to the chip. The peel strength of the aluminum nitride ceramic substrate is >20 این/ملی میٹر 2 ، عمدہ مکینیکل خصوصیات ، سنکنرن مزاحمت کے ساتھ ، اور خراب شدہ . کے لئے آسان نہیں ہے اس کو وسیع درجہ حرارت کی حد . میں استعمال کیا جاسکتا ہے۔